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Layout related deformations of meander-type MOS transistor I/V characteristics

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2 Author(s)
Maly, W. ; Carnegie Mellon University, Department of Electrical & Computer Engineering, Pittsburgh, USA ; Syrzycki, M.

The I/V characteristics of an n-channel silicon-gate folded MOS transistor, having a large value of gate width/length ratio, has been investigated. Significant deformations of these characteristics are reported and an explanation of the observed inconsistency with typical transistor models is proposed.

Published in:

Solid-State and Electron Devices, IEE Proceedings I  (Volume:132 ,  Issue: 1 )

Date of Publication:

February 1985

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