By Topic

Simulation and measurement of c/v doping profiles in multilayer structures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $33
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
J. E. A. Whiteaway ; Standard Telecommunication Laboratories Limited, Harlow, UK

C/V doping profiles are simulated through n-type multilayer structures containing heterojunctions. The perceived doping profile obtained from C/V measurements can differ markedly from the actual carrier profile in the vicinity of a hetero- or homojunction. The model is applied to conventional FET structures, high-electron-mobility transistors and superlattices.

Published in:

IEE Proceedings I - Solid-State and Electron Devices  (Volume:130 ,  Issue: 4 )