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Comparison of MOS processes for VLSI

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2 Author(s)
Oldham, H.E. ; GEC, Research Laboratories, Hirst Research Centre, Wembley, UK ; Partridge, S.L.

A comparison of semiconductor technologies for VLSI is presented with particular reference to the limitations imposed by fundamental, technological and circuit-design considerations. Unichannel MOS and CMOS on single-crystal silicon or insulating substrates are the primary subjects for discussion.

Published in:

Solid-State and Electron Devices, IEE Proceedings I  (Volume:130 ,  Issue: 3 )