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Browse Journals & Magazines > Solid-State and Electron Devi ...> Volume:130 Issue:1 Help

Two-dimensional finite-element simulation of a permeable-base transistor

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4 Author(s)
Marty, A. ; Centre National de la Recherche Scientifique, Laboratoire d''Automatique et d''Analyse des Systèmes, Toulouse, France ; Clarac, J. ; Bailbe, J.P. ; Rey, G.

Permeable-base-transistor modelling in two dimensions by the finite-element method is reported. The results of the applications presented demonstrate the capabilities of this simulation.

Published in:
Solid-State and Electron Devices, IEE Proceedings I  (Volume:130 ,  Issue: 1 )

Date of Publication: February 1983

Page(s):
24 - 28
ISSN :
0143-7100
Digital Object Identifier :
10.1049/ip-i-1.1983.0005
Product Type:
Journals & Magazines
Date of Current Version :
11 November 2008
Issue Date :
February 1983

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