By Topic

Formation of a long-wavelength buried-crescent laser structure on channelled substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Murrell, D.L. ; British Telecom, Research Laboratories, Ipswich, UK ; Walling, R.H. ; Hobbs, R.E. ; Devlin, W.J.

A laser structure, in which a cresent-shaped GaInAsP active region is isolated within a channel chemically etched in an InP substrate, has been formed in a single stage of liquid-phase epitaxial growth. The growth process was influenced, first, by the magnitude and uniformity of the channel width, cross-section and depth, and, secondly, by melt super-saturation. High strength mask-to-substrate adhesion and low super-saturation were necessary for the reproducible formation of the structure. Lasers with pulsed threshold currents of 30¿40 mA at ¿ 25°C have been obtained, and stable zero-order transverse-mode CW operation was possible up to at least 9 mW. These lasers have operated successfully in experimental optical-fibre transmission systems.

Published in:

Solid-State and Electron Devices, IEE Proceedings I  (Volume:129 ,  Issue: 6 )