Cart (Loading....) | Create Account
Close category search window
 

Noise figure for mesfet with delta-function doping profile

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Maxfield, N.P. ; University of Sheffield, Department of Electronic & Electrical Engineering, sheffield, UK ; Stitch, J.E. ; Robson, P.N.

The minimum noise figure for a MESFET with a delta-function doping profile along the substrate interface is calculated using an analytical method and a two-dimensional computer simulation. The results are compared with similar results obtained for a uniformly doped device. For typical GaAs FETs the minimum noise figure is not improved. However, at the minimum noise point the transconductance is higher, compensating for the increased source-gate capacitance there.

Published in:

Solid-State and Electron Devices, IEE Proceedings I  (Volume:129 ,  Issue: 2 )

Date of Publication:

April 1982

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.