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Noise figure for mesfet with delta-function doping profile

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3 Author(s)
Maxfield, N.P. ; University of Sheffield, Department of Electronic & Electrical Engineering, sheffield, UK ; Stitch, J.E. ; Robson, P.N.

The minimum noise figure for a MESFET with a delta-function doping profile along the substrate interface is calculated using an analytical method and a two-dimensional computer simulation. The results are compared with similar results obtained for a uniformly doped device. For typical GaAs FETs the minimum noise figure is not improved. However, at the minimum noise point the transconductance is higher, compensating for the increased source-gate capacitance there.

Published in:

Solid-State and Electron Devices, IEE Proceedings I  (Volume:129 ,  Issue: 2 )

Date of Publication:

April 1982

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