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Metal-semiconductor contacts

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1 Author(s)
E. H. Rhoderick ; University of Manchester Institute of Science & Technology, Department of Electrical Engineering & Electronics, Manchester, UK

A review is given of our present knowledge of metal-semiconductor contacts. Topics covered include the factors that determine the height of the Schottky barrier, its current/voltage characteristics, and its capacitance. A short discussion is also given of practical contacts and their application in semiconductor technology, and a comparison is made with p-n junctions.

Published in:

IEE Proceedings I - Solid-State and Electron Devices  (Volume:129 ,  Issue: 1 )