By Topic

Simple model and study of charge handling and injection in charge-coupled devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Ferguson, R.S. ; Queen's University of Belfast, Department of Engineering Mathematics, Ashby Institute, Belfast, UK ; Ryan, W.D.

An accurate simulation of charge transport in a charge-coupled device requires estimate to be made of fringing and self-induced fields. This has involved a two-dimensional solution for the potential distribution in the substrate, which can be expensive on computing time. The algorithm presented here restricts the calculation to a single set of nodal points along the surface of the device, and has been shown to be significantly faster, with little error, when compared with the corresponding two-dimensional solution. An attempt has also been made to obtain a simpler description of charge transport along the channel which avoids some of the problems which arise in the solution of the highly nonlinear transport equation. The simulation of two cases relevant to the operation of the CCD transfer process are presented. A study of injection from a source diffusion is also included.

Published in:

Solid-State and Electron Devices, IEE Proceedings I  (Volume:128 ,  Issue: 6 )