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Circuit model of double-heterojunction laser below threshold

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1 Author(s)
Tucker, RodneyS. ; University of Queensland, Department of Electrical Engineering, Brisbane, Australia

A new circuit model of a stripe-geometry double-heterojunction injection laser below threshold is presented. The model is derived from the physics of the semiconductor heterojunction, and takes into account the effects of active-layer carrier degeneracy, high-level injection, and nonradiative recombination along the stripe edge. Turn-on delay characteristics and small-signal input resistance characteristics of a laser are computed using the circuit model. Results of these analyses are compared with previous theoretical results and published experimental data.

Published in:

Solid-State and Electron Devices, IEE Proceedings I  (Volume:128 ,  Issue: 3 )