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Characterisation of ion-implanted layers for GAAS FETs

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2 Author(s)
Bujatti, M. ; Selenia S.p.A., Research Department, Roma, Italy ; Marcelja, F.

The problem of measuring very steep doping profiles, of the type usually present in ion-implanted GaAs FETs, is critically examined in the light of numerical solutions of the Poisson equation for some typical layers. It is found that the most popular techniques (C/V and saturation-current measurements) may be quite misleading or, at least, appreciable corrections are typically required.

Published in:

Solid-State and Electron Devices, IEE Proceedings I  (Volume:128 ,  Issue: 3 )