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Charge-coupled devices in gallium arsenide

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4 Author(s)
Deyhimy, I. ; Rockwell International, Research Center, Thousand Oaks, USA ; Anderson, R.J. ; Eden, Richard C. ; Harris, J.S., Jr.

The electronic properties of GaAs and their implications to device performance have been the subject of discussion for some time, and discrete devices such as diodes and f.e.t, with performance exceeding that which has been achieved in similar silicon devices, are commercially available. Recent advances in GaAs material and processing technologies have made possible the realisation of integrated devices with substantial complexity which have demonstrated greater speed and lower power dissipation than equivalent silicon devices. Digital integrated circuits with sub-100 ps propagation delay and power dissipation compatible with large scale integration have been demonstrated. In this paper, we describe a GaAs charge-coupled device which has demonstrated some of the attributes expected from GaAs devices of this type. This device has been operated at fcl = 500 MHz which is faster than any other ccd. Design considerations and application areas for this device are discussed.

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Solid-State and Electron Devices, IEE Proceedings I  (Volume:127 ,  Issue: 5 )