By Topic

General model for defect formation in silicon dioxide

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Zakzouk, A.K.M. ; Riyadh University, Electrical Engineering Department, Riyadh, Saudi Arabia

This paper proposes a general model for the formation of the defects, in silicon dioxide, which conforms to existing concepts involved in the migration of ions through SiO2 and confirms Peek's law. Furthermore the interrelationship between the time required for the formation of any number of defects and the applied electric field is shown to be consistent with the presence of space charge limited ion currents in the oxide. Such currents are shown to give rise to enhanced Fowler-Nordheim emission of electrons into the oxide. In developing the model, a boundary layer approximation is used. The present results are consistent with the presence of large amounts of trapped mobile ions in the boundary layer. Such traps would lead to a boundary layer of which the thickness does not vary with time and which acts as a plentiful supply of mobile ions.

Published in:

Solid-State and Electron Devices, IEE Proceedings I  (Volume:127 ,  Issue: 5 )