By Topic

Monte carlo particle simulation of n-type GaAs field-effect transistors with a p-type buffer layer

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Sanghera, G.S. ; University of Reading, Department of Computer Science, Reading, UK ; Chryssafis, A. ; Moglestue, C.

The Monte Carlo particle model of GaAs Schottky-barrier field-effect transistors developed at Reading has been applied to describe a new f.e.t. geometry in order to establish the noise performance. The effect of introducing a p-type layer between the epilayer and the substrate is examined and the d.c. characteristics obtained are presented. By varying the thicknesses of both the epilayer and the buffer layer, as well as the doping of the latter, an optimal design has been arrived at. However, the transconductance of this optimal design is very sensitive to the thickness of the epilayer.

Published in:

Solid-State and Electron Devices, IEE Proceedings I  (Volume:127 ,  Issue: 4 )