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Baritt diodes for ka-band frequencies

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2 Author(s)
Freyer, J. ; Technische Universitÿt Mÿnchen, Lehrstuhl fÿr Allgemeine Elektrotechnik & Angewandte Elektronik, Mÿnchen, West Germany ; Förg, P.N.

Design rules for uniformly doped Baritt diodes in the frequency range 8 to 40 GHz are derived. The fabrication of Ka-band Baritt diodes which deliver up to 1.7 mW is described. The theoretical and experimental results of the investigated diodes fit very well.

Published in:

Solid-State and Electron Devices, IEE Proceedings I  (Volume:127 ,  Issue: 2 )