By Topic

Investigation of Ar ion implant gettering of gold in silicon by m.o.s. and Rutherford backscattering techniques

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $33
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
A. G. Nassibian ; University of Western Austrilia, Department of Electrical & Electronic Engineering, Perth, Australia ; B. Golja

The gettering of Au in silicon has been investigated using m.o.s. techniques and Rutherford backscattering. Silicon wafers were intentionally contaminated with Au, and then Ar ion implant was performed on the back surface of the wafer and the damaged layer annealed at 1050°C for times of 15 and 60 minutes. Comparison of generation lifetime between gold wafers and gold implant-gettered wafers, obtained from the response of m.o.s. capacitors to a linearly varying voltage showed a marked improvement for the implant gettered wafers. Rutherford backscattering using 14N+ ions was carried out on the wafers, both on the implant damaged layer and on some 30¿40¿m in the bulk of the material. The Au concentration in the implant damaged layer was higher than in the bulk of the same wafer for both anneal times, indicating that Au had been effectively gettered. The backscattering speetra also showed other impurities such as Br, Cu, Fe, Sb, Sn and Te present in higher concentration in the implant damaged layer than in the bulk

Published in:

IEE Proceedings I - Solid-State and Electron Devices  (Volume:127 ,  Issue: 1 )