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Nanoscale Triple Material Double Gate (TM-DG) MOSFET for Improving Short Channel Effects

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2 Author(s)
Pedram Razavi ; Electr. Eng. Dept., Semnan Univ., Semnan ; Ali A. Orouji

In this paper, a novel double-gate (DG) MOSFET in which the top and bottom gates consist of three laterally contacting material with different work functions is proposed. Using two-dimensional (2-D) device simulation, improvement of short channel effects such as drain-induced barrier lowering (DIBL), hot-carrier effects and channel length modulation (CLM) are investigated and compared with the dual material double-gate MOSFET and conventional DG MOSFET. This structure exhibits significantly improved short channel effects (SCEs) when compared with the conventional DG MOSFET.

Published in:

Advances in Electronics and Micro-electronics, 2008. ENICS '08. International Conference on

Date of Conference:

Sept. 29 2008-Oct. 4 2008