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Broadband emission from InGaAs-GaAs-AlGaAs LED with integrated absorber by selective-area MOCVD

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5 Author(s)
Osowski, M.L. ; Microelectron. Lab., Illinois Univ., Urbana, IL, USA ; Lammert, R.M. ; Forbes, D.V. ; Ackley, D.E.
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Three-step selective-area metal organic chemical vapour deposition is used to fabricate a strained layer InGaAs-GaAs-AlGaAs single quantum well broad spectrum LED with an integrated absorber. A tapered oxide width mask pattern is used for the active region regrowth to produce an edge emitting device with a continuous variation in the quantum well thickness and composition along its length. A maximum spectral width of 165 nm is obtained

Published in:

Electronics Letters  (Volume:31 ,  Issue: 17 )

Date of Publication:

17 Aug 1995

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