Referenced Items are not available for this document.
State-of-the-art InGaAs/InP heterojunction bipolar transistors were grown by all-solid source molecular beam epitaxy. Fabricated transistors showed cutoff frequencies of >100 GHz with an emitter area of 1.5×5 μm2. Together with recent studies. These results demonstrate that the valved cracker technique is a very competitive nontoxic growth method
Published in:
Electronics Letters
(Volume:31
,
Issue:
17
)
Date of Publication: 17 Aug 1995
- Page(s):
- 1514 - 1515
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 5068003
- Digital Object Identifier :
- 10.1049/el:19951015
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- 17 Aug 1995
- Sponsored by :
- Institution of Engineering and Technology
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