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InGaAs/lnP heterojunction bipolar transistor grown by all-solid source molecular beam epitaxy

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3 Author(s)
Willen, B. ; Dept. of Electron., R. Inst. of Technol., Kista, Sweden ; Asonen, H. ; Toivonen, M.

State-of-the-art InGaAs/InP heterojunction bipolar transistors were grown by all-solid source molecular beam epitaxy. Fabricated transistors showed cutoff frequencies of >100 GHz with an emitter area of 1.5×5 μm2. Together with recent studies. These results demonstrate that the valved cracker technique is a very competitive nontoxic growth method

Published in:

Electronics Letters  (Volume:31 ,  Issue: 17 )