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TID and SEE Tests of an Advanced 8 Gbit NAND-Flash Memory

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6 Author(s)
H. Schmidt ; Tech. Univ. of Braunschweig, Braunschweig ; D. Walter ; F. Gliem ; B. Nickson
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We report on the dose and operational mode dependence of error percentage, stand-by current, erase and write time of 8 Gbit / 4 Gbit NAND-flash memories as well as on their static, dynamic and SEFI cross sections.

Published in:

2008 IEEE Radiation Effects Data Workshop

Date of Conference:

14-18 July 2008