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Towards a Ge-based laser for CMOS applications

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5 Author(s)
Jifeng Liu ; Microphotonics Center, Massachusetts Inst. of Technol., Cambridge, MA ; Sun, Xiaochen ; Becla, Piotr ; Kimerling, L.C.
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We report experimental observation of direct band gap photoluminescence (PL) and optical bleaching of band-engineered epitaxial Ge-on-Si at room temperature, confirming that this material is a promising candidate for efficient light emitting devices on Si.

Published in:

Group IV Photonics, 2008 5th IEEE International Conference on

Date of Conference:

17-19 Sept. 2008

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