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A Novel 4.5 \hbox {F}^{2} Capacitorless Semiconductor Memory Device

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2 Author(s)
Peng-Fei Wang ; Oriental Semicond. Technol. Co., Ltd., Shanghai ; Yi Gong

This letter proposes a novel 4.5F2 capacitorless dynamic random access memory cell with a floating gate (FG) connected to drain via a gated p-n junction diode. The FG in the proposed memory device is for charge storage and can electrically be charged or discharged by current flowing through a gated p-n junction diode.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 12 )