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Noise Behavior of a 180 nm CMOS SOI Technology for Detector Front-End Electronics

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7 Author(s)
Re, V. ; Dipt. di Ing. Ind., Univ. di Bergamo, Dalmine ; Gaioni, L. ; Manghisoni, M. ; Ratti, L.
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This paper is motivated by the growing interest of the detector and readout electronics community towards silicon-on-insulator CMOS processes. Advanced SOI MOSFETs feature peculiar electrical characteristics impacting their performance with respect to bulk CMOS devices. Here we mainly focus on the study of these effects on the noise parameters of the transistors, using experimental data relevant to 180 nm fully depleted SOI devices as a reference. The comparison in terms of white and 1/f noise components with bulk MOSFETs with the same minimum feature size gives a basis of estimate for the signal-to-noise ratio achievable in detector front-end integrated circuits designed in an SOI technology.

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Nuclear Science, IEEE Transactions on  (Volume:55 ,  Issue: 4 )