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GaSb-based microcavity EP-VCSEL emitting above 2.2 μm in CW regime at RT

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4 Author(s)
A. Ducanchez ; Institut d¿electronique du Sud (IES) UMR CNRS 5214, case 067, Université Montpellier II, 34095, Cedex 05, France ; L. Cerutti ; P. Grech ; F. Genty

Monolithic microcavity GaSb-based VCSELs emitting above 2.2 mum in continuous wave regime at room temperature are reported. For 60 mum diameter devices, a density threshold of 1.1 kA/cm2 was measured at 290 K.

Published in:

2008 IEEE 21st International Semiconductor Laser Conference

Date of Conference:

14-18 Sept. 2008