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GaSb-based electrically pumped VCSEL with buried tunnel junction operating continuous wave up to 50°C

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3 Author(s)
A. Bachmann ; Walter Schottky Institut, Technische Universität München, Am Coulombwall 3, 85748 Garching, Germany ; K. Kashani-Shirazi ; M. -C. Amann

2.33 mum electrically pumped GaSb-based VCSELs with low threshold currents, continuous-wave and single-mode operation up to 50degC are presented. The devices are (electro-) thermally tunable over 10 nm.

Published in:

2008 IEEE 21st International Semiconductor Laser Conference

Date of Conference:

14-18 Sept. 2008