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InP / AlGaInP short wavelength quantum dot lasers

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6 Author(s)
Smowton, P.M. ; Sch. of Phys. & Astron., Cardiff Univ., Cardiff ; Al-Ghamdi, M. ; Elliott, S.N. ; Edwards, G.
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We demonstrate MOVPE grown InP q-dot lasers with low threshold current density (195 Acm-2 for 2000 mum long uncoated devices at 300 K) and extended wavelength-coverage (680-740 nm). Modulation p-doping reduces gain saturation in lower confinement structures.

Published in:

Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International

Date of Conference:

14-18 Sept. 2008