Cart (Loading....) | Create Account
Close category search window
 

Developments of long-wavelength VCSELs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Kapon, E. ; Lab. of Phys. of Nanostruct., Ecole Polytech. Fed. de Lausanne (EPFL), Lausanne

In this paper, significant progress in long-wavelength VCSELs technology has been achieved in recent years, mostly thanks to the use of high gain InP/InAlGaAs QW active regions and the implementation of intra-cavity contacting using tunnel junctions. The recent demonstrations of high single mode output powers (as high as 2.2 mW up to 85deg C), simultaneously with low power consumption, makes these devices an attractive alternative to traditional distributed feedback lasers in applications requiring low cost, highly integrable light sources.

Published in:

Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International

Date of Conference:

14-18 Sept. 2008

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.