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Evaluation of Si wire waveguide fabricated by parallel plate RIE process using double layered EB resist containing C60

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6 Author(s)
Inoue, K. ; Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo ; Nishiyama, N. ; Enomoto, H. ; Tamura, S.
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By applying a double layered EB resist containing C60, we could form fine vertical shaped rectangular Si wire waveguide on silicon on insurator (SOI) by parallel plate reactive-ion-etching (RIE). The propagation loss of single-mode Si wire waveguide for TE mode was obtained to be 4.5 dB/cm at 1550 nm, which is the lowest value for those fabricated by parallel plate RIE.

Published in:

Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International

Date of Conference:

2-15 Aug. 2008