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Strain relaxation effect by nano-pattern etching in InGaN/GaN quantum well structures grown by rf-plasma assisted molecular beam epitaxy.

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3 Author(s)
Vadivelu, R. ; Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo ; Kikuchi, A. ; Kishino, K.

The IQE of InGaN quantum-wells emit from green to red is not so high due to spatial separation of electrons and holes by strain-induced piezo-electric-field. The strain relaxation in InGaN-QWs by nano etching is discussed.

Published in:

Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International

Date of Conference:

2-15 Aug. 2008