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GaInAsP/InP lateral current injection laser grown on SI-InP substrate for membrane photonic integrated circuits

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7 Author(s)
Okumura, T. ; Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo ; Kurokawa, M. ; Shirao, M. ; Kondo, D.
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A lateral current injection laser with a thin (400 nm) core structure grown on a semi-insulating InP substrate was realized and a room-temperature (RT) pulsed operation was obtained. A threshold current of 105 mA, which corresponds to a threshold current density of 1.3 kA/cm2, was obtained for a 1.47 mm long Fabry-Perot cavity laser.

Published in:
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International

Date of Conference: 2-15 Aug. 2008

Page(s):
229 - 230
Print ISBN:
978-1-4244-2656-0
INSPEC Accession Number:
10366218
Conference Location :
Shonan Village
Digital Object Identifier :
10.1109/INOW.2008.4634521
Product Type:
Conference Publications

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