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GaInAsP/InP lateral current injection laser grown on SI-InP substrate for membrane photonic integrated circuits

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7 Author(s)
Tadashi Okumura ; Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, 152-8552, Japan ; Munetaka Kurokawa ; Mizuki Shirao ; Daisuke Kondo
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A lateral current injection laser with a thin (400 nm) core structure grown on a semi-insulating InP substrate was realized and a room-temperature (RT) pulsed operation was obtained. A threshold current of 105 mA, which corresponds to a threshold current density of 1.3 kA/cm2, was obtained for a 1.47 mm long Fabry-Perot cavity laser.

Published in:

Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International

Date of Conference:

2-15 Aug. 2008