Cart (Loading....) | Create Account
Close category search window

Microscopic recombination kinetics in high quality, fully coalesced a-plane GaN ELO structures investigated by ps-time-resolved cathodoluminescence microscopy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Bastek, B. ; Inst. of Exp. Phys., Otto-von-Guericke-Univ. Magdeburg, Magdeburg ; Bertram, F. ; Christen, J. ; Wernicke, T.
more authors

The recombination kinetics of the free exciton (FX) and basal plane stacking fault (BSF) emission in a-plane GaN epitaxial lateral overgrowth structures is analyzed by ps-time-resolved cathodoluminescence microscopy in the temperature range from 5K to 300K. The capture of FX by donors and the thermionic emission of holes from the BSF Quantum Well is analyzed.

Published in:

Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International

Date of Conference:

2-15 Aug. 2008

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.