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Microscopic recombination kinetics in high quality, fully coalesced a-plane GaN ELO structures investigated by ps-time-resolved cathodoluminescence microscopy

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6 Author(s)
Bastek, B. ; Inst. of Exp. Phys., Otto-von-Guericke-Univ. Magdeburg, Magdeburg ; Bertram, F. ; Christen, J. ; Wernicke, T.
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The recombination kinetics of the free exciton (FX) and basal plane stacking fault (BSF) emission in a-plane GaN epitaxial lateral overgrowth structures is analyzed by ps-time-resolved cathodoluminescence microscopy in the temperature range from 5K to 300K. The capture of FX by donors and the thermionic emission of holes from the BSF Quantum Well is analyzed.

Published in:

Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International

Date of Conference:

2-15 Aug. 2008

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