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Improved Light Extraction Efficiency in AlGaInP Light-Emitting Diodes by Applying a Periodic Texture on the Surface

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6 Author(s)
Liang-Jyi Yan ; Adv. Optoelectron. Technol. Center, Nat. Cheng Kung Univ., Tainan ; Sheu, J.K. ; Wei-Chih Wen ; Tien-Fu Liao
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In this letter, AlGaInP-GaP-based light-emitting diodes (LEDs) were fabricated with an Si substrate and an SiO2-ITO-Ag omni-directional reflector using a metal-to-metal bonding technique. To enhance light extraction efficiency, a periodic texture was applied to the (Al0.5Ga0.5)0.5In0.5P surface layer of AlGaInP-Si LEDs by photolithography and a wet etching process. The exterior of the etched texture consists of a series of bowl-shaped recesses. With a 350-mA current injection, the typical output power of the AlGaInP-Si LEDs with and without the textured surface (LED-I and LED-II, respectively) were measured at approximately 118 and 81 mW, respectively, when the LED chips were bonded on the TO 46 without resin encapsulation. The enhancement of output power in LED-I can be attributed to a multitude of bowl-shaped notches on the surface, which resulted in a reduction of the reabsorption probability of the photons due to the fact that the photon path length in LED-I is shorter than in LED-II before the photons escape into the free space.

Published in:

Photonics Technology Letters, IEEE  (Volume:20 ,  Issue: 20 )