By Topic

GaN-Based Schottky Barrier Photodetectors With a 12-Pair Mg _{\rm x} N _{\rm y} –GaN Buffer Layer

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
S. J. Chang ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan ; K. H. Lee ; P. C. Chang ; Y. C. Wang
more authors

GaN-based ultraviolet (UV) photodetectors (PDs) separately prepared with a conventional single low-temperature (LT) GaN buffer layer and a 12-pair MgxNy-GaN buffer layer were both fabricated. It was found that we could reduce threading dislocation (TD) density and thus improve crystal quality of the GaN-based UV PDs by using the 12-pair MgxNy-GaN buffer layer. With a -2-V applied bias, it was found that the reverse leakage currents measured from PDs with a single LT GaN buffer layer and that with a 12-pair MgxNy-GaN buffer layer were 4.57 times 10-6 and 1.44 times 10-12 A, respectively. It was also found that we could use the 12-pair MgxNy-GaN buffer layer to suppress photoconductive gain, enhance UV-to-visible rejection ratio, reduce noise level, and enhance the detectivity.

Published in:

IEEE Journal of Quantum Electronics  (Volume:44 ,  Issue: 10 )