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Integration of Photonic Crystals on GaN-Based Blue LEDs Using Silicon Mold Substrates

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9 Author(s)
Kenji Orita ; Semicond. Device Res. Center, Matsushita Electr. Ind. Panasonic, Takatsuki ; Yuji Takase ; Yasuyuki Fukushima ; Manabu Usuda
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In this paper, we demonstrate a novel method to integrate photonic crystals (PhCs) on GaN-based blue light-emitting diodes (LEDs) using a silicon substrate as a mold for forming the PhCs. This method starts with fabricating a 2D grooved Si substrate as that mold. Subsequently, GaN-based epitaxial layers are grown on the Si mold-substrate, which effectively reduces the dislocation density in GaN by enhanced lateral epitaxial growth. After the epitaxial layers are bonded onto a highly reflective substrate, the Si mold-substrate is removed. This substrate-transfer technique replicates PhC from the mold-substrate on the LED surface free from processing damages. The resultant LEDs with PhC have outperformed the LEDs without PhC in the optical output power by 80%, taking advantage of the enhanced light extraction by PhC.

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IEEE Journal of Quantum Electronics  (Volume:44 ,  Issue: 10 )