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Gain Compression and Above-Threshold Linewidth Enhancement Factor in 1.3- \mu\hbox {m} InAs–GaAs Quantum-Dot Lasers

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5 Author(s)
Grillot, F. ; Center for High Technol. Mater., Univ. of New Mexico, Albuquerque, NM ; Dagens, B. ; Provost, J. ; Hui Su
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Quantum-dot (QD) lasers exhibit many useful properties such as low threshold current, temperature and feedback insensitivity, chirpless behavior, and low linewidth enhancement factor (alphaH-factor). Although many breakthroughs have been demonstrated, the maximum modulation bandwidth remains limited in QD devices, and a strong damping of the modulation response is usually observed pointing out the role of gain compression. This paper investigates the influence of the gain compression in a 1.3-mum InAs-GaAs QD laser and its consequences on the above-threshold alphaH-factor. A model is used to explain the dependence of the alphaH-factor with the injected current and is compared with AM/FM experiments. Finally, it is shown that the higher the maximum gain, the lower the effects of gain compression and the lower the alphaH-factor. This analysis can be useful for designing chirpless QD lasers with improved modulation bandwidth as well as for isolator-free transmission under direct modulation.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:44 ,  Issue: 10 )

Date of Publication:

Oct. 2008

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