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Gate-Induced Image Force Barrier Lowering in Schottky Barrier FETs

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6 Author(s)
Lang Zeng ; Inst. of Microelectron., Peking Univ., Beijing ; Zhiliang Xia ; Gang Du ; Jinfeng Kang
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In this paper, we analyze the gate-induced image force barrier lowering in a 45-nm-gate-length ultra-thin-body silicon-on-insulator structure by using 2D full-band self-consistent ensemble Monte Carlo simulation with both tunneling current and thermal emission current. Results show that gate-induced barrier lowering has a very significant influence on the drive current. The influence of gate voltage, Schottky barrier height, spacer and channel doping concentration is also investigated and a theoretical analysis is presented.

Published in:

Nanotechnology, IEEE Transactions on  (Volume:8 ,  Issue: 1 )

Date of Publication:

Jan. 2009

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