Referenced Items are not available for this document.
In this letter, we report a new approach to treat the 2-D nonlinear Poisson's equation in the context of MOS devices and discuss its application in the modeling of tunneling field-effect transistors (T-FET). It is revealed that the narrowing of tunneling barrier in T-FET has different mechanisms before and after inversion layer is formed. Closed-form equation is obtained to describe the barrier narrowing in the presence of inversion layer.
Published in:
Electron Device Letters, IEEE
(Volume:29
,
Issue:
11
)
Date of Publication: Nov. 2008
- Page(s):
- 1252 - 1255
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 10310847
- Digital Object Identifier :
- 10.1109/LED.2008.2005517
- Product Type:
- Journals & Magazines
- Date of Publication :
- 26 September 2008
- Date of Current Version :
- 21 October 2008
- Issue Date :
- Nov. 2008
- Sponsored by :
- IEEE Electron Devices Society
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