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Characterization of Carbon Nanotube Field Effect Transistors using an active load pull LSNA setup

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9 Author(s)
Gaquiere, C. ; Institute of Electronics Microelectronics and Nanoterchonlogies (IEMN), U.M.R C.N.R.S 8520, 59652 Villeneuve d¿Ascq Cedex, France ; Curutchet, A. ; Theron, D. ; Werquin, M.
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Carbon Nanotube Field Effect Transistors (CN- FETs) seem to be very promising candidates for the future microwave frequency applications. However, these components present high impedance values which make very difficult the characterization using usual characteristic impedance of microwave instrumentations (50Omega). To determine CNFET microwave capabilities, special techniques of measurements must be developed such as for example heterodyne detection, or two-tone measurements with the observation of the inter- modulation products. In our case we propose an original method using a Large Signal Network Analyser (LSNA) associated with an active load pull configuration. The aim of this active load pull is to reduce the mismatch between the CNFET output impedance and the 50Omega load and hence increase the measurements accuracy of these nano- devices. Moreover these samples can be characterize in linear but also non linear conditions.

Published in:

Microwave Symposium Digest, 2008 IEEE MTT-S International

Date of Conference:

15-20 June 2008