By Topic

Large-signal hybrid compact/behavioral HBT model for III-V technology power amplifiers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Nielsen, T.S. ; RFMD, Greensboro, NC 27409 USA ; Nedeljkovic, S. ; Halchin, Dave

This paper presents a large-signal hetrojunction bipolar transistor model for III-V technologies. A standard HBT compact model is demonstrated accurate in most regions of operation. At low collector supplies and high input drive levels, however, the compact model fails to accurately predict largesignal RF performance. Model inaccuracies are, through largesignal network analyzer measurements, attributed to minority carrier injection due to forward biased base-collector junction; a phenomenon which is not accounted for in the compact model. A hybrid model is proposed. This is a combination of the standard compact model and an artificial neural network based behavioral model. The artificial neural network is trained to empirically model minority carrier injection in the base-collector junction. Significant accuracy improvement is demonstrated and it is verified that greater accuracy comes at the expense of a very small degradation in execution speed.

Published in:

Microwave Symposium Digest, 2008 IEEE MTT-S International

Date of Conference:

15-20 June 2008