By Topic

Early GaAs FET monolithic microwave integrated circuit developments for radar applications at Plessey, UK

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Pengelly, R.S. ; Cree Inc., Research Triangle Park, North Carolina, 27709 U.S.A.

The early development of GaAs FET monolithic microwave integrated circuits (MMICs) for phased array radar applications at Plessey in the UK over the period of 1975 through 1989 is described. Following the introduction of a basic GaAs MMIC fabrication process in the early 1970psilas at Plessey Central Research Laboratories (Caswell) and the characterization of distributed and lumped element components at Plessey Applied Research Laboratories (Roke Manor) a complete range of MMICs were designed and fabricated to be used in fully integrated transmit/receive modules in S-band.

Published in:

Microwave Symposium Digest, 2008 IEEE MTT-S International

Date of Conference:

15-20 June 2008