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A 2-stage 150W 2.2GHz dual path LDMOS RF power amplifier for high efficiency applications

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3 Author(s)
Cedric Cassan ; Freescale Semiconducteurs SAS, RF Division, 134 avenue du général Eisenhower, BP72329, 31023 Toulouse Cédex, France ; Jeff Jones ; Olivier Lembeye

This paper presents a dual path 150W Silicon LDMOS 2-stage RF power amplifier designed for WCDMA at 2.2GHz. This device is capable of handling 2 times the UMTS band with flat RF performance. Under a 1 tone CW stimulus, this power amplifier delivers 150W with a power added efficiency of 47% and 29dB linear gain. A 2-stage compact Doherty amplifier constructed of an “in-package” 2 × 75W architecture is also presented, showing the versatility of this unique design. Using the device in a dual-path configuration, this Doherty circuit delivers an increase in drain efficiency of 9–12 points at 8 dB output backoff from P3dB compression, compared to a circuit using the device in a 150W, class-AB reference design.

Published in:

Microwave Symposium Digest, 2008 IEEE MTT-S International

Date of Conference:

15-20 June 2008