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Development of an Ultrafast On-the-Fly I_{\rm DLIN} Technique to Study NBTI in Plasma and Thermal Oxynitride p-MOSFETs

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6 Author(s)
Maheta, V.D. ; Dept. of Electr. Eng., Indian Inst. of Technol. Bombay, Mumbai ; Kumar, E.N. ; Purawat, S. ; Olsen, C.
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An ultrafast on-the-fly technique is developed to study linear drain current (I DLIN) degradation in plasma and thermal oxynitride p-MOSFETs during negative-bias temperature instability (NBTI) stress. The technique enhances the measurement resolution (ldquotime-zerordquo delay) down to 1 mus and helps to identify several key differences in NBTI behavior between plasma and thermal films. The impact of the time-zero delay on time, temperature, and bias dependence of NBTI is studied, and its influence on extrapolated safe-operating overdrive condition is analyzed. It is shown that plasma-nitrided films, in spite of having higher N density, are less susceptible to NBTI than their thermal counterparts.

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Electron Devices, IEEE Transactions on  (Volume:55 ,  Issue: 10 )