Scheduled System Maintenance:
On May 6th, system maintenance will take place from 8:00 AM - 12:00 PM ET (12:00 - 16:00 UTC). During this time, there may be intermittent impact on performance. We apologize for the inconvenience.
By Topic

Band Effects on the Transport Characteristics of Ultrascaled SNW-FETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
5 Author(s)
Gnani, E. ; Adv. Res. Center on Electron. Syst. (ARCES), Univ. of Bologna, Bologna ; Gnudi, A. ; Reggiani, S. ; Luisier, M.
more authors

In this paper, we investigate band-structure effects on the transport characteristics of ultrascaled silicon nanowire (SNW) FETs by means of quantum transport simulations. To this purpose, a new approach is used for the solution of the open-boundary Schrodinger equation in the SNW, accounting for the appropriate dispersion relationships of the subbands induced by the confinement of the 1-D electron gas. The model is validated by comparison with 3-D atomistic simulations based on the tight-binding approach, and simulation results are compared with a simpler effective-mass model with either constant and fitted (not bulk-like) transport effective masses. The proposed model predicts: (1) the possibility of negative differential output conductance in thin SNW-FETs related with the finite energy extension of the subbands; (2) an increase of the intrinsic transit time, corresponding to a reduced electron average velocity; and (3) a degradation of the subthreshold slope at short channel lengths, due to enhanced tunneling currents.

Published in:

Nanotechnology, IEEE Transactions on  (Volume:7 ,  Issue: 6 )