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Relative intensity noise characteristics in a frequency stabilized modelocked semiconductor laser system

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4 Author(s)
Lee, W. ; Center for Res.&Educ. in Opt.&Lasers, Univ. of Central Florida, Orlando, FL ; Myoung-taek Choi ; Izadpanah, H. ; Delfyett, P.J.

RIN characteristics in a frequency stabilized MSL were experimentally and theoretically investigated. Average RIN level of less than -150 dB/Hz as well as Modal RIN reduction of approximately 3 dB were obtained from the frequency stabilized MSL.

Published in:

Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on

Date of Conference:

21-26 May 2006

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