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Optical properties of InAs quantum dot structures transferred to Si with oxidation lift-off technology

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5 Author(s)
Yakimov, M. ; Coll. of Nanoscale Sci. & Eng., Univ. at Albany - SUNY, Albany, NY ; Kambhampati, R. ; Tokranov, V. ; van Eisden, J.
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Homoepitaxially grown InAs quantum dot structures were transferred to Si substrates using oxidation lift-off technology accompanied by direct hydrophilic bonding with Si. Electroluminescence with injection through the substrate and photoluminescence data are presented.

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Published in:

Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on

Date of Conference:

21-26 May 2006