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OpticalWaveguides in Sn2P2S6 by low fluence MeV He+ ion implantation

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4 Author(s)
Andrea Guarino ; Nonlinear Optics Laboratory, ETH Zurich, 8093, Switzerland ; Mojca Jazbinsek ; Christian Herzog ; Peter Gunter

Optical waveguides in nonlinear crystals of Sn2P2S6 have been produced by He+ ion implantation. Best results are obtained with a fluence about Phi = 0.5 middot 1015 ions/cm2 and for hybrid n1-mode. The depth of the induced optical barrier is Deltan1 = -0.07 at lambda = 0.633mum.

Published in:

2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference

Date of Conference:

21-26 May 2006