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High power single mode lasers based on InAs/GaInAs quantum dot material with enhanced temperature stability

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4 Author(s)
Kaiser, W. ; Tech. Phys., Univ. of Wurzburg, Wurzburg ; Deubert, S. ; Reithmaier, J.P. ; Forchel, A.

High power 915 nm quantum dot lasers with increased temperature stability of the emission wavelength (< 0.1 nm/K) were realized. By application of a lateral grating to tapered lasers a single mode emission of > 400 mW was achieved.

Published in:

Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on

Date of Conference:

21-26 May 2006