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Hydrogen Ion Sensing Using Schottky Contacted Silicon Nanowire FETs

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3 Author(s)
Sung Keun Yoo ; Sch. of Inf. & Mechatron., Gwangju Inst. of Sci. & Technol. (GIST), Gwangju ; Sung Yang ; Jong-Hyun Lee

In this paper, we demonstrate the hydrogen ion sensing capability of Schottky contacted silicon nanowire (SiNW) FETs prepared by simple process steps. As a response to the pH level, a threshold voltage shift of 0.49 V/pH and a significant current variation of 19%/pH were acquired. The real-time measurement of the SiNWFETs for the various pH solutions reveals the response time of 1 min or less. An excellent reproducibility and the comparably stable current at each pH levels were observed, implying acute sensing ability.

Published in:

IEEE Transactions on Nanotechnology  (Volume:7 ,  Issue: 6 )