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Impacts of \hbox {N}_{2} and \hbox {NH}_{3} Plasma Surface Treatments on High-Performance LTPS-TFT With High- \kappa Gate Dielectric

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5 Author(s)
Ming-Wen Ma ; Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu ; Tien-Sheng Chao ; Tsung-Yu Chiang ; Woei-Cherng Wu
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Low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs) with high- kappa gate dielectrics and plasma surface treatments are demonstrated for the first time. Significant field-effect mobility muFE improvements of ~ 86.0% and 112.5% are observed for LTPS-TFTs with HfO2 gate dielectric after N2 and NH3 plasma surface treatments, respectively. In addition, the N2 and NH3 plasma surface treatments can also reduce surface roughness scattering to enhance the field-effect mobility muFE at high gate bias voltage V G, resulting in 217.0% and 219.6% improvements in driving current, respectively. As a result, high-performance LTPS-TFT with low threshold voltage V TH ~ 0.33 V, excellent subthreshold swing S.S. ~ 0.156 V/decade, and high field-effect mobility muFE ~ 62.02 cm2 V middots would be suitable for the application of system-on-panel.

Published in:

IEEE Electron Device Letters  (Volume:29 ,  Issue: 11 )