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Threshold Voltage Modulation Using \hbox {N}_{2}^{+} Implantation Into Substrate for Ni Fully Silicided Gate/High- k NMOS

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6 Author(s)
Tomohiro Yamashita ; Adv. Device Dev. Dept., Renesas Technol. Corp., Itami ; Yukio Nishida ; Katsumi Eikyu ; Hidekazu Oda
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The significance of controlling threshold voltage using nitrogen molecule ion (N2 +) implantation into a silicon substrate was demonstrated for an n-channel MOS with a nickel fully silicided gate electrode and a high-k gate dielectric. We have clarified the idea that a small part of the implanted nitrogen was activated and acted as a counter dope for a channel by secondary ion mass spectrometry analysis, spreading resistance analysis, and inverse modeling analysis of MOS capacitance-voltage characteristics. It was found that N2 + implantation had an advantage over N+ implantation for forming a shallow counter-dope layer because the nitrogen-nitrogen pair has large diffusion coefficient, which resulted in a steep profile of nitrogen in a substrate.

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IEEE Electron Device Letters  (Volume:29 ,  Issue: 10 )