Scheduled System Maintenance on May 29th, 2015:
IEEE Xplore will be upgraded between 11:00 AM and 10:00 PM EDT. During this time there may be intermittent impact on performance. We apologize for any inconvenience.
By Topic

Threshold Voltage Modulation Using \hbox {N}_{2}^{+} Implantation Into Substrate for Ni Fully Silicided Gate/High- k NMOS

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Yamashita, T. ; Adv. Device Dev. Dept., Renesas Technol. Corp., Itami ; Nishida, Y. ; Eikyu, K. ; Oda, H.
more authors

The significance of controlling threshold voltage using nitrogen molecule ion (N2 +) implantation into a silicon substrate was demonstrated for an n-channel MOS with a nickel fully silicided gate electrode and a high-k gate dielectric. We have clarified the idea that a small part of the implanted nitrogen was activated and acted as a counter dope for a channel by secondary ion mass spectrometry analysis, spreading resistance analysis, and inverse modeling analysis of MOS capacitance-voltage characteristics. It was found that N2 + implantation had an advantage over N+ implantation for forming a shallow counter-dope layer because the nitrogen-nitrogen pair has large diffusion coefficient, which resulted in a steep profile of nitrogen in a substrate.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 10 )