Demonstration of Schottky Barrier NMOS Transistors With Erbium Silicided Source/Drain and Silicon Nanowire Channel

We have fabricated silicon nanowire N-MOSFETs using erbium disilicide (ErSi
_2-x
) in a Schottky source/drain back-gated architecture. Although the subthreshold swing (~180 mV/dec) and drain-induced barrier lowering (~500 mV/V) are high due thick BOX as gate oxide, the fabricated Schottky transistors show acceptable drive current ~900 muA/mum and high I
_on
/I
_off
ratio (~10
⁵
). This is attributed to the improved carrier injection as a result of low Schottky barrier height (Phi
_b
) of ErSi
_2-x
/n - Si(~0.3 eV) and the nanometer-sized (~8 nm) Schottky junction. The carrier transport is found to be dominated by the metal-semiconductor interface instead of the channel body speculated from the channel length independent behavior of the devices. Furthermore, the transistors exhibit ambipolar characteristics, which are modeled using thermionic/thermionic-field emission for positive and thermionic-field emission for negative gate biases.